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RUH120N35L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RUH120N35L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 110 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 18 nC
   trⓘ - Время нарастания: 29.6 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO252

 Аналог (замена) для RUH120N35L

 

 

RUH120N35L Datasheet (PDF)

 ..1. Size:255K  ruichips
 ruh120n35l.pdf

RUH120N35L RUH120N35L

RUH120N35LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,D RDS (ON) =28m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance 100% Avalanche Tested Fast Switching Speed Lead Free and Green Devices (RoHS Compliant)GSTO252DApplications Atomizer Switch S

 5.1. Size:225K  ruichips
 ruh120n35m3.pdf

RUH120N35L RUH120N35L

RUH120N35M3N-Channel Advanced Power MOSFETFeatures Pin Description 120V/35A,RDS (ON) =30m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN3030D

 7.1. Size:325K  ruichips
 ruh120n140s.pdf

RUH120N35L RUH120N35L

RUH120N140SN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,DRDS (ON) =3.4m(Typ.)@VGS=10VRDS (ON) =3.7m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) ProductE ll t Q R P d t 100% avalanche tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoH

 7.2. Size:372K  ruichips
 ruh120n70r.pdf

RUH120N35L RUH120N35L

RUH120N70RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/70A,RDS (ON) =15m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDD

 7.3. Size:266K  ruichips
 ruh120n81l.pdf

RUH120N35L RUH120N35L

RUH120N81LN-Channel Advanced Power MOSFETFeatures Pin Description 120V/80A,D RDS (ON) =9.5m(Typ.)@VGS=10V RDS (ON) =11m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching Loss 100% Avalanche TestedG Lead Free and Green Devices (RoHS Compliant)

 7.4. Size:381K  ruichips
 ruh120n140r.pdf

RUH120N35L RUH120N35L

RUH120N140RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,RDS (ON) =3.6m(Typ.)@VGS=10VRDS (ON) =3.8m(Typ.)@VGS=4.5V Uses Ruichips advanced RUISGTTM technology Ultra Low On-Resistance Excellent QgxRDS( ) Product Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Avail

 7.5. Size:260K  ruichips
 ruh120n140t.pdf

RUH120N35L RUH120N35L

RUH120N140TN-Channel Advanced Power MOSFETFeatures Pin Description 120V/140A,11RDS (ON) =3.4m(Typ.)@VGS=10V910RDS (ON) =4m(Typ.)@VGS=4.5V109 Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance1111 Excellent Qg&RDS(on) PerformanceE ll t Q &R P f2 834 76 Low Gate Charge Minimizing Switching Loss56 54 100% Avalanch

 7.6. Size:229K  ruichips
 ruh120n90m.pdf

RUH120N35L RUH120N35L

RUH120N90MN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.2m(Typ.)@VGS=10VDRDS (ON) =7m(Typ.)@VGS=4.5VDD Ultra Low On-ResistanceD Fast Switching Speed 100% Avalanche TestedG Uses Ruichips advanced RUISGTTM technologySS Lead Free and Green Devices (RoHS Compliant)SPIN1DFN5060DApplications Synchr

 7.7. Size:372K  ruichips
 ruh120n90r.pdf

RUH120N35L RUH120N35L

RUH120N90RN-Channel Advanced Power MOSFETFeatures Pin Description 120V/90A,RDS (ON) =6.5m(Typ.)@VGS=10VRDS (ON) =7.5m(Typ.)@VGS=4.5V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceE ll t Q &R P f 100% Avalanche Tested 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)

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