RUH1H150S-AR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUH1H150S-AR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 334 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 62 nC
trⓘ - Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 1830 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO263
Аналог (замена) для RUH1H150S-AR
RUH1H150S-AR Datasheet (PDF)
ruh1h150s-ar.pdf
RUH1H150S-ARN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,DRDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDD
ruh1h150s.pdf
RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD
ruh1h150r-a.pdf
RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD
ruh1h150t.pdf
RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre
ruh1h150m-c.pdf
RUH1H150M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =2.8m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060D
ruh1h150r.pdf
RUH1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =3.2m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications Motor Drives Uninte
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Список транзисторов
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