Справочник MOSFET. RUH1H150T

 

RUH1H150T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RUH1H150T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 94 nC
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 3150 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: TOLL

 Аналог (замена) для RUH1H150T

 

 

RUH1H150T Datasheet (PDF)

 ..1. Size:265K  ruichips
 ruh1h150t.pdf

RUH1H150T RUH1H150T

RUH1H150TN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,11RDS (ON) =2.9m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Fre

 6.1. Size:396K  ruichips
 ruh1h150r-a.pdf

RUH1H150T RUH1H150T

RUH1H150R-AN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)GD

 6.2. Size:311K  ruichips
 ruh1h150s.pdf

RUH1H150T RUH1H150T

RUH1H150SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,D RDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDDD

 6.3. Size:282K  ruichips
 ruh1h150m-c.pdf

RUH1H150T RUH1H150T

RUH1H150M-CN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =2.8m(Typ.)@VGS=10V Using Ruichips Advanced RUISGTTM Technology Ultra Low On-ResistanceG Excellent Qg&RDS(on) PerformanceSS Low Gate Charge Minimizing Switching LossS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060D

 6.4. Size:1197K  ruichips
 ruh1h150r.pdf

RUH1H150T RUH1H150T

RUH1H150RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,RDS (ON) =3.2m(Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DApplications Motor Drives Uninte

 6.5. Size:387K  ruichips
 ruh1h150s-ar.pdf

RUH1H150T RUH1H150T

RUH1H150S-ARN-Channel Advanced Power MOSFETFeatures Pin Description 100V/150A,DRDS (ON) =3.2m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested100% l h t t d 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DDDD

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