RUH40190M - Даташиты. Аналоги. Основные параметры

RUH40190MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/190A,DDRDS (ON) =1.7m(Typ.)@VGS=10VDD Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance Exceptional dv/dt CapabilityGS Low Gate Charge Minimize Switching LossSS 100% Avalanche Tested Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DA

RUH40140MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/140A,RDS (ON) =1.4m(Typ.)@VGS=10V DDDDRDS (ON) =1.9m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

RUH40130MN-Channel Advanced Power MOSFETFeatures Pin Description 40V/130A,RDS (ON) =1.9m(Typ.)@VGS=10V DDDDRDS (ON) =2.7m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power

RUH4022M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/20A,DRDS (ON) =16m(Typ.)@VGS=10VDDRDS (ON) =23m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS Excellent QgxRDS(on) product(FOM) 100% Avalanche TestedPIN1 Lead Free and Green Devices

RUH4040M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =7m(Typ.)@VGS=10V DDDRDS (ON) =12m(Typ.)@VGS=4.5VD Ultra Low On-Resistance Excellent QgxRDS(on) product(FOM)G 100% avalanche testedSS Lead Free and Green Devices Available (RoHS Compliant) SPIN1DFN3030DApplications DC/DC Converters On board power

RUH4025M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/25A,DRDS (ON) =15m(Typ.)@VGS=10VDDRDS (ON) =21m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D

RUH40E12CN-Channel Advanced Power MOSFETFeatures Pin Description 40V/12A, RDS (ON) =17m(Typ.)@VGS=10VD RDS (ON) =24m(Typ.)@VGS=4.5V Uses Ruichips Advanced SGTTM Technology Ultra Low On-Resistance Very Fast SwitchingG ESD protected Lead Free and Green Devices (RoHS Compliant)S SOT23-3DApplications Load Switch Power ManagementG

RUH40D40MDual N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,D2RDS (ON) =6m(Typ.)@VGS=10VD2D1RDS (ON) =8m(Typ.)@VGS=4.5VD1 Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG2 Ultra Low On-ResistanceS2G1 Excellent QgxRDS(on) product(FOM)S1 100% Avalanche TestedPIN1 Lead Free and

RUH4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5.5m(Typ.)@VGS=10V DDDDRDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for

RUH40330TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/330A,11RDS (ON) =0.95m(Typ.)@VGS=10V910RDS (ON) =1.4m(Typ.)@VGS=4.5V109 Uses Ruichips Proprietary New Trench Technology Ultra Low On-Resistance1111 Exceptional dv/dt Capability Exceptional dv/dt Capability2 834 76 Low Gate Charge Minimize Switching Loss56 54

RUH40300TN-Channel Advanced Power MOSFETFeatures Pin Description 40V/300A,11RDS (ON) =1.5m(Typ.)@VGS=10V910 Using Ruichips Proprietary New Trench Technology10 Ultra Low On-Resistance 9 Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching Loss Low Gate Charge Minimizing Switching Loss2 834 76 100% Avalanche Tested