Справочник MOSFET. FQD5N60C

 

FQD5N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD5N60C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 49 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 2.8 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 2.5 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD5N60C

 

 

FQD5N60C Datasheet (PDF)

1.1. fqd5n60c fqu5n60c.pdf Size:636K _fairchild_semi

FQD5N60C
FQD5N60C

October 2008 QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

5.1. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

FQD5N60C
FQD5N60C

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been espec

5.2. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQD5N60C
FQD5N60C

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been esp

 5.3. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQD5N60C
FQD5N60C

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

5.4. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

FQD5N60C
FQD5N60C

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been espe

 5.5. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

FQD5N60C
FQD5N60C

October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to

5.6. fqd5n50c.pdf Size:664K _fairchild_semi

FQD5N60C
FQD5N60C

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

5.7. fqd5n15.pdf Size:840K _fairchild_semi

FQD5N60C
FQD5N60C

November 2013 FQD5N15 N-Channel QFET® MOSFET 150 V, 4.3 A, 800 mΩ Description Features This N-Channel enhancement mode power MOSFET is • 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 2.15 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 5.4 nC) MOSFET technology has been especially tai

Другие MOSFET... FQD3P50 , FQD3P50TM_F085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , IRFP260M , FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L .

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MOSFET: MDZ1N60UMH | MDV5524URH | MDV3605URH | MDV3604URH | MDV1595SURH | MDV1548URH | MDV1545URH | MDV1542URH | MDV1529EURH | MDV1528URH | MDV1527URH | MDV1526URH | MDV1525URH | MDV1524URH | MDV1523URH |
 


 

 

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