Справочник MOSFET. RUH85230S

 

RUH85230S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RUH85230S
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 440 W
   Предельно допустимое напряжение сток-исток |Uds|: 85 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 230 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 97 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 1850 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
   Тип корпуса: TO263

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RUH85230S Datasheet (PDF)

 ..1. Size:315K  ruichips
 ruh85230s.pdf

RUH85230S RUH85230S

RUH85230SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/230A,D RDS (ON) =2.5m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl

 8.1. Size:376K  ruichips
 ruh85210r.pdf

RUH85230S RUH85230S

RUH85210RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/210A, RDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD

 9.1. Size:279K  ruichips
 ruh85120m-c.pdf

RUH85230S RUH85230S

RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou

 9.2. Size:375K  ruichips
 ruh85150r.pdf

RUH85230S RUH85230S

RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl

 9.3. Size:687K  ruichips
 ruh85120s.pdf

RUH85230S RUH85230S

RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD

 9.4. Size:280K  ruichips
 ruh85100m-c.pdf

RUH85230S RUH85230S

RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Syn

 9.5. Size:264K  ruichips
 ruh85350t.pdf

RUH85230S RUH85230S

RUH85350TN-Channel Advanced Power MOSFETFeatures Pin Description 85V/350A,11RDS (ON) =1.3m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Free

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