RUH85230S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUH85230S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 440 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 230 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 97 nC
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 1850 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: TO263
RUH85230S Datasheet (PDF)
ruh85230s.pdf
RUH85230SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/230A,D RDS (ON) =2.5m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl
ruh85210r.pdf
RUH85210RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/210A, RDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD
ruh85120m-c.pdf
RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou
ruh85150r.pdf
RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl
ruh85120s.pdf
RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD
ruh85100m-c.pdf
RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Syn
ruh85350t.pdf
RUH85350TN-Channel Advanced Power MOSFETFeatures Pin Description 85V/350A,11RDS (ON) =1.3m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Free
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918