H12N60P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: H12N60P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 38 nC
trⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 185 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO-220AB
H12N60P Datasheet (PDF)
h12n60p h12n60f.pdf
12N60 SeriesN-Channel MOSFET12A, 600V, N H FQP12N60C H12N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs12N60FQPF12N60C H12N60F F: TO-220FP12N60 Series Pin AssignmentFeaturesID=12AOriginative
ixgh12n60cd1.pdf
HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 ALightspeedTM Series VCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Co
ixgh12n60c.pdf
IXGH 12N60CHiPerFASTTM IGBTVCES = 600 VLightspeedTM Series IC25 = 24 AVCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V C (TAB)GIC25 TC = 25C24 ACEIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collecto
ixgh12n60bd1.pdf
IXGH 12N60BD1HiPerFASTTM IGBTVDSS = 600 VID25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collect
ixgh12n60b.pdf
HiPerFASTTM IGBT IXGH 12N60BVDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collector,
h12n60.pdf
Spec. No. : MOS200902 HI-SINCERITY Issued Date : 2009.01.20 Revised Date : MICROELECTRONICS CORP. Page No. : 1/4 H12N60F H12N60F N-Channel Power MOSFET (600V,12A) 3-Lead TO-220FP) Plastic Package Package Code: F Applications Pin 1: Gate Switch Mode Power Supply Pin 2: Drain Pin 3: Source Uninterruptable Power Supply 3 2 1 High Speed Power Switch
hfh12n60.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc
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