NCE01ND03Shttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01ND03S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =100V,I =3ADS DR

Pb Free ProductNCE01NP03Shttp://www.ncepower.com NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE01NP03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features Schematic diagram N-channel P-channel VDS = 100V,ID = 3A VDS = -100

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

NCE0130KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0125AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE0125AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =25A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

NCE0102Ehttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0102E uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 2ADS DR

Pb Free Producthttp://www.ncepower.com NCE0110AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR

Pb Free Producthttp://www.ncepower.com NCE0159NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0159 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =59A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0115KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

Pb Free Producthttp://www.ncepower.com NCE0102MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0102ZNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0103MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0110KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR

http://www.ncepower.com NCE0106ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON)

NCE011N30GUhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE011N30GU uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =325ADS(ON) DS Dbe used in a wide variety of applications. R =0.75m (typical) @ V =10VDS(ON) GSR =1.5m (typical) @ V =4.5VApplication DS(ON) GS

http://www.ncepower.comNCE0104SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0104S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =4ADS DR

Pb Free ProductNCE0108AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0125AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0125AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =25A Schematic diagram RDS(ON)

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01P03SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-3A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0160GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0117KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

http://www.ncepower.com NCE01P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-5A Schematic diagram RDS(ON)

http://www.ncepower.comNCE0105MNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0105M uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 5ADS DR

Pb Free Producthttp://www.ncepower.com NCE0103NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0103YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

http://www.ncepower.com NCE0102ANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0102A uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0102NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

http://www.ncepower.com NCE0115AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

http://www.ncepower.com NCE0160AGNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =60A RDS(ON)

http://www.ncepower.comNCE01P13INCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P13I uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-13A Schematic diagramDS DR

Pb Free ProductNCE0110AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

Pb Free Producthttp://www.ncepower.com NCE0107AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON)

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

http://www.ncepower.com NCE0130GANCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE0130GA uses advanced trench technology and VDS = 100V,ID =30A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0157DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

http://www.ncepower.com NCE0104ANNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

http://www.ncepower.com NCE0102BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID = 1.8A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0106RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR

http://www.ncepower.comNCE01P35KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P35K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-100V,I =-35A Schematic diagramDS DR

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

NCE01P13http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

NCE0140AK2http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140AK2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40A Schematic diagramDS DR

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

NCE0130Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)

http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE01P13KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

Pb Free ProductNCE0140KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

Pb Free Producthttp://www.ncepower.com NCE0106ZNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0106Z uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 6A RDS(ON)

NCE0117www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

NCE0108ASwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSS