NCE1227SP - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCE1227SP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 27 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 1500 ns
Cossⓘ - Выходная емкость: 507 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
Тип корпуса: CSP
Аналог (замена) для NCE1227SP
NCE1227SP Datasheet (PDF)
nce1227sp.pdf

http://www.ncepower.com NCE1227SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1227SP uses advanced trench technology to provide VSSS =12V,IS =27A excellent RSS(ON), low gate charge and operation with gate RSS(on)=2.1m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 8V VGS(MAX) rating. It is
nce1220sp.pdf

http://www.ncepower.com NCE1220SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE1220SP uses advanced trench technology to provide VSSS =12V,IS =20A excellent RSS(ON), low gate charge and operation with gate RSS(on)=3.6m (typical) @ VGS=4.5V voltages as low as 2.5V while retaining a 10V VGS(MAX) rating. It is
nce1205.pdf

Pb Free Producthttp://www.ncepower.com NCE1205N and P-Channel Enhancement Mode Power MOSFET Description The NCE1205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channelVDS =1
nce1230sp.pdf

http://www.ncepower.comNCE1230SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescriptionGeneral FeaturesThe NCE1230SP uses advanced trench technology to provide V =12V,I =30ASSS Sexcellent R , low gate charge and operation with gateSS(ON)R on =1.0m (typical) @ V =4.5VSS( ) GSvoltages as low as 2.5V while retaining a 8V V rating. It isGS(
Другие MOSFET... NCE020N30K , NCE025N30G , NCE025N30K , NCE035N30G , NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , TK10A60D , NCE1230SP , NCE18ND11U , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 .
History: 2SK2740 | VSO008N10MS | MT4435ACTR | SSF2814E | AP02N60P-HF | SSF2810EH2 | SRC65R220BS
History: 2SK2740 | VSO008N10MS | MT4435ACTR | SSF2814E | AP02N60P-HF | SSF2810EH2 | SRC65R220BS



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