NCE60NF200T - описание и поиск аналогов

 

NCE60NF200T. Аналоги и основные параметры

Наименование производителя: NCE60NF200T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 16 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCE60NF200T

- подборⓘ MOSFET транзистора по параметрам

 

NCE60NF200T даташит

 ..1. Size:682K  ncepower
 nce60nf200t.pdf pdf_icon

NCE60NF200T

NCE60NF200T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.1. Size:679K  ncepower
 nce60nf200i.pdf pdf_icon

NCE60NF200T

NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.2. Size:686K  ncepower
 nce60nf200k.pdf pdf_icon

NCE60NF200T

NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 4.3. Size:697K  ncepower
 nce60nf200f.pdf pdf_icon

NCE60NF200T

NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCE4953A , NCE50N540F , NCE50NF220D , NCE6004 , NCE60ND09AS , NCE60ND18G , NCE60ND20AK , NCE60ND45G , IRFB31N20D , NCE60NF420 , NCE60NF420D , NCE60NF420F , NCE60NF420I , NCE60NF420K , NCE60P14K , NCE60P82AF , NCE65N680D .

 

 

 

 

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