Справочник MOSFET. NCE60P14K

 

NCE60P14K Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE60P14K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 19.4 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 52 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.096 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

NCE60P14K Datasheet (PDF)

 ..1. Size:788K  ncepower
nce60p14k.pdfpdf_icon

NCE60P14K

NCE60P14Khttp://www.ncepower.comNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60P14K uses advanced trench technology anddesign to provide excellent R with low gate charge .ThisDS(ON)device is well suited for use as a load switch or in PWMapplications.General FeaturesSchematic diagram V =-60V,I =-14ADS DR

 6.1. Size:414K  ncepower
nce60p14ak.pdfpdf_icon

NCE60P14K

NCE60P14AKhttp://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-14A RDS(ON)

 7.1. Size:410K  ncepower
nce60p16aq.pdfpdf_icon

NCE60P14K

http://www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS Dor power management. R

 7.2. Size:418K  ncepower
nce60p18ak.pdfpdf_icon

NCE60P14K

Pb Free Producthttp://www.ncepower.com NCE60P18AKNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P18AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-18A RDS(ON)

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