NCE65NF130V Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCE65NF130V
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 237 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 175 °C
Qg ⓘ - Общий заряд затвора: 41 nC
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 95 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: DFN8X8
Аналог (замена) для NCE65NF130V
NCE65NF130V Datasheet (PDF)
nce65nf130v.pdf

NCE65NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A
nce65nf130ll.pdf

NCE65NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC,
nce65nf130f.pdf

NCE65NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A
nce65nf130.pdf

NCE65NF130N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC
Другие MOSFET... NCE65N680I , NCE65N680K , NCE65N680R , NCE65NF130 , NCE65NF130D , NCE65NF130F , NCE65NF130LL , NCE65NF130T , 5N50 , NCE70N290T , NCE70N380T , NCE8205B , NCE8205T , NCE8601B , NCE8651Q , NCEA2309 , NCEA75H25 .
History: SML100S11 | BRCS4614SC | SSF3637S
History: SML100S11 | BRCS4614SC | SSF3637S



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