Справочник MOSFET. NCE65NF130V

 

NCE65NF130V Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65NF130V
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 237 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 16 ns
   Cossⓘ - Выходная емкость: 95 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: DFN8X8
     - подбор MOSFET транзистора по параметрам

 

NCE65NF130V Datasheet (PDF)

 ..1. Size:632K  ncepower
 nce65nf130v.pdf pdf_icon

NCE65NF130V

NCE65NF130VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A

 4.1. Size:652K  ncepower
 nce65nf130ll.pdf pdf_icon

NCE65NF130V

NCE65NF130LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC,

 4.2. Size:692K  ncepower
 nce65nf130f.pdf pdf_icon

NCE65NF130V

NCE65NF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, A

 4.3. Size:686K  ncepower
 nce65nf130.pdf pdf_icon

NCE65NF130V

NCE65NF130N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 110 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 26 Adiode.This super junction MOSFET fits the industrys AC-DCQg 41 nCSMPS requirements for PFC, AC

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History: IXTP60N28TM-A | RFM04U6P | MS5N60 | SWF4N65D | MDIB6N70CTH | BSS84N3 | 2SK2882

 

 
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