NCEP015NH30AGU Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP015NH30AGU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 89 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 830 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEP015NH30AGU
NCEP015NH30AGU Datasheet (PDF)
ncep015nh30agu.pdf

NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
ncep015nh30aqu.pdf

NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
ncep015nh30gu.pdf

NCEP015NH30GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP015NH30GU uses Super Trench III technologyV =30V,I =189ADS Dthat is uniquely optimized to provide the most efficient highR =1.25m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.7m (typical) @ V =4.5VDS(ON) GSswi
ncep015n30gu.pdf

http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
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