NCEP015NH30AGU datasheet, аналоги, основные параметры

Наименование производителя: NCEP015NH30AGU  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 89 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 830 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm

Тип корпуса: PDFN5X6-8L

  📄📄 Копировать 

Аналог (замена) для NCEP015NH30AGU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP015NH30AGU даташит

 ..1. Size:829K  ncepower
 ncep015nh30agu.pdf pdf_icon

NCEP015NH30AGU

NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 2.1. Size:636K  ncepower
 ncep015nh30aqu.pdf pdf_icon

NCEP015NH30AGU

NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a

 3.1. Size:1032K  ncepower
 ncep015nh30gu.pdf pdf_icon

NCEP015NH30AGU

NCEP015NH30GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP015NH30GU uses Super Trench III technology V =30V,I =189A DS D that is uniquely optimized to provide the most efficient high R =1.25m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =1.7m (typical) @ V =4.5V DS(ON) GS swi

 6.1. Size:347K  ncepower
 ncep015n30gu.pdf pdf_icon

NCEP015NH30AGU

http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU, NCEP014NH60GU, NCEP015N85LL, IRFZ44, NCEP015NH30AQU, NCEP015NH30GU, NCEP018NH30QU, NCEP023NH85AGU, NCEP023NH85GU, NCEP1580F, NCEP40ND80G, NCEP40T14A