Справочник MOSFET. NCEP023NH85GU

 

NCEP023NH85GU Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP023NH85GU
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 242 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 245 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 2062 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
   Тип корпуса: PDFN5X6-8L
 

 Аналог (замена) для NCEP023NH85GU

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP023NH85GU Datasheet (PDF)

 ..1. Size:687K  ncepower
ncep023nh85gu.pdfpdf_icon

NCEP023NH85GU

NCEP023NH85GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP023NH85GU uses Super Trench III technology that V =85V,I =245ADS Dis uniquely optimized to provide the most efficient highR =2.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)D

 3.1. Size:797K  ncepower
ncep023nh85agu.pdfpdf_icon

NCEP023NH85GU

NCEP023NH85AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFET (Primary)Description General FeaturesThe NCEP023NH85AGU uses Super Trench III technology V =85V,I =250ADS Dthat is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5VDS(ON)

 5.1. Size:713K  ncepower
ncep023nh30gu.pdfpdf_icon

NCEP023NH85GU

http://www.ncepower.comNCEP023NH30GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP023NH30GU uses Super Trench III technologyV =30V,I =114ADS Dthat is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5VDS(ON) GSswitchi

 6.1. Size:855K  ncepower
ncep023n10d.pdfpdf_icon

NCEP023NH85GU

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

Другие MOSFET... NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU , NCEP018NH30QU , NCEP023NH85AGU , IRFB4110 , NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , NCES075R026T4 , NCES120P035T4 .

History: NDPL100N10BG | WML10N65EM | SSL60R099SFD | IRF9358 | IRF742FI | RUH008N15M-C | MSC37N03

 

 
Back to Top

 


 
.