NCEP40T14A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP40T14A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 140 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 59.5 nC
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 1920 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP40T14A
NCEP40T14A Datasheet (PDF)
ncep40t14a.pdf
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NCEP40T14Ahttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T14A uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q .DS(ON) gThis device is ideal for high-frequency switchi
ncep40t14g.pdf
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http://www.ncepower.com NCEP40T14GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T14G uses Super Trench technology that is VDS =40V,ID =140A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.6m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=2.3m (typical) @ VGS=4.5V losses are m
ncep40t15a.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T15ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T15A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17g.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t13agu.pdf
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http://www.ncepower.com NCEP40T13AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T13AGU uses Super Trench technology that is VDS =40V,ID =130A uniquely optimized to provide the most efficient high RDS(ON)=1.8m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching po
ncep40t11.pdf
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http://www.ncepower.com NCEP40T11NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi
ncep40t12agu.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T12AGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP40T12AGU uses Super Trench technology that is VDS =40V,ID =120A uniquely optimized to provide the most efficient high RDS(ON)=2.05m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(F
ncep40t19gu.pdf
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http://www.ncepower.comNCEP40T19GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T19GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency swit
ncep40t15gu.pdf
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NCEP40T15GUhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =150ADS DThe NCEP40T15GU uses Super Trench technology that is uniquelyR =1.09m , typical@ V =10VDS(ON) GSoptimized to provide the most efficient high frequency switchingR =1.5m , typical@ V =4.5VDS(ON) GSperformance. Both conduction and switching power l
ncep40t16ll.pdf
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http://www.ncepower.comNCEP40T16LLNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =40V,I =160ADS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =1.85m , typical @ V =4.5VDS
ncep40t17a.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T17ANCE N-Channel Super Trench Power MOSFET Description The NCEP40T17A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t12gu.pdf
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http://www.ncepower.com NCEP40T12GUNCE N-Channel Super Trench Power MOSFET General Features Description VDS =40V,ID =120A The NCEP40T12GU uses Super Trench technology that is RDS(ON)=2.05m (typical) @ VGS=10V uniquely optimized to provide the most efficient high RDS(ON)=3.1m (typical) @ VGS=4.5V frequency switching performance. Both conduction and Excellent gat
ncep40t15agu.pdf
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http://www.ncepower.com NCEP40T15AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T15AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =150ADS Dswitching performance. Both conduction and switching power R =1.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely
ncep40t15ak.pdf
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http://www.ncepower.com NCEP40T15AKNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40T15AK uses Super Trench technology that is V =40V,I =150ADS Duniquely optimized to provide the most efficient high frequencyR =1.9m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)
ncep40t11ak.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T11AKNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep40t17ad.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T17ADNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T17AD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig
ncep40t11k.pdf
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http://www.ncepower.comNCEP40T11KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch
ncep40t15g.pdf
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http://www.ncepower.com NCEP40T15GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T15G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40t11ag.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T11AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17at.pdf
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Pb Free Producthttp://www.ncepower.com NCEP40T17ATNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17ATuses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t11g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCEP40T11GNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40t17ag.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
http://www.ncepower.com NCEP40T17AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40t13gu.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Pb Free Producthttp://www.ncepower.com NCEP40T13GUNCE N-Channel Super Trench Power MOSFET Description The NCEP40T13GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![NCEP40T14A](https://alltransistors.com/images/us.png)
![NCEP40T14A](https://alltransistors.com/images/es.png)
![NCEP40T14A](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100