NCEP60ND30AG. Аналоги и основные параметры

Наименование производителя: NCEP60ND30AG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17 ns

Cossⓘ - Выходная емкость: 183.2 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0175 Ohm

Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP60ND30AG

- подборⓘ MOSFET транзистора по параметрам

 

NCEP60ND30AG даташит

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NCEP60ND30AG

http //www.ncepower.com NCEP60ND30AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are

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http //www.ncepower.com NCEP60ND60G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND60G uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switchi

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http //www.ncepower.com NCEP6090GU NCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

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Pb Free Product http //www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

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