BL10N65A-P. Аналоги и основные параметры

Наименование производителя: BL10N65A-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 156 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: TO-220

Аналог (замена) для BL10N65A-P

- подборⓘ MOSFET транзистора по параметрам

 

BL10N65A-P даташит

 ..1. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf pdf_icon

BL10N65A-P

BL10N65A Power MOSFET 1 Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 8.1. Size:120K  international rectifier
 irfbl10n60a.pdf pdf_icon

BL10N65A-P

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu

 8.2. Size:539K  belling
 bl10n60-p bl10n60-a.pdf pdf_icon

BL10N65A-P

BL10N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 8.3. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf pdf_icon

BL10N65A-P

BL10N60A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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