Справочник MOSFET. BL10N70-A

 

BL10N70-A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BL10N70-A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 41.5 nC
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 155 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для BL10N70-A

 

 

BL10N70-A Datasheet (PDF)

 ..1. Size:1134K  belling
 bl10n70-p bl10n70-a.pdf

BL10N70-A BL10N70-A

BL10N70 Power MOSFET 1Description Step-Down Converter BL10N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 7.1. Size:909K  belling
 bl10n70a-p bl10n70a-a.pdf

BL10N70-A BL10N70-A

BL10N70A Power MOSFET 1Description Step-Down Converter BL10N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.1. Size:120K  international rectifier
 irfbl10n60a.pdf

BL10N70-A BL10N70-A

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

 9.2. Size:441K  jilin sino
 bl10n15a bl10p15a.pdf

BL10N70-A BL10N70-A

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBL10N15A BL10P15A APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS

 9.3. Size:1506K  belling
 bl10n80-p bl10n80-a bl10n80-w bl10n80-f.pdf

BL10N70-A BL10N70-A

BL10N80 Power MOSFET 1Description Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.4. Size:1123K  belling
 bl10n40-p bl10n40-a bl10n40-u bl10n40-d.pdf

BL10N70-A BL10N70-A

BL10N40 Power MOSFET 1Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.5. Size:539K  belling
 bl10n60-p bl10n60-a.pdf

BL10N70-A BL10N70-A

BL10N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 9.6. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf

BL10N70-A BL10N70-A

BL10N65A Power MOSFET 1Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.7. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf

BL10N70-A BL10N70-A

BL10N60A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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