Справочник MOSFET. BL12N65A-A

 

BL12N65A-A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BL12N65A-A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 82 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.73 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для BL12N65A-A

 

 

BL12N65A-A Datasheet (PDF)

 ..1. Size:541K  belling
bl12n65a-p bl12n65a-a.pdf

BL12N65A-A
BL12N65A-A

BL12N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

 7.1. Size:539K  belling
bl12n65-p bl12n65-a.pdf

BL12N65A-A
BL12N65A-A

BL12N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 8.1. Size:538K  belling
bl12n60-p bl12n60-a.pdf

BL12N65A-A
BL12N65A-A

BL12N60 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 8.2. Size:981K  belling
bl12n60a-p bl12n60a-a.pdf

BL12N65A-A
BL12N65A-A

12N60A Power MOSFET 1Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

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