Справочник MOSFET. BL20N65-P

 

BL20N65-P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BL20N65-P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

BL20N65-P Datasheet (PDF)

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 bl20n65-p bl20n65-a bl20n65-w bl20n65-f.pdf pdf_icon

BL20N65-P

BL20N65 Power MOSFET 1Description Step-Down Converter BL20N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 8.1. Size:1053K  belling
 bl20n60-p bl20n60-a bl20n60-w bl20n60-f.pdf pdf_icon

BL20N65-P

BL20N60 Power MOSFET 1Description Step-Down Converter BL20N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:197K  ixys
 ixbl20n300c.pdf pdf_icon

BL20N65-P

Advance Technical InformationHigh Voltage,VCES = 3000VIXBL20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 V EC Isolated TabVGES Continuous

 9.2. Size:1563K  belling
 bl20n50-p bl20n50-a bl20n50-w bl20n50-k.pdf pdf_icon

BL20N65-P

BL20N50 Power MOSFET 1Description BL20N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

ПОКАЗАТЬ ЕЩЁ

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History: BSC025N03MS | APM9926 | STP5NB40 | STD3N30LT4 | SJMN099R60ZSW | 2P985G-2 | 2SK3532

 

 
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