BL25N65-F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BL25N65-F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 82 ns
Cossⓘ - Выходная емкость: 389 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
BL25N65-F Datasheet (PDF)
bl25n65-w bl25n65-f.pdf

BL25N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica
bl25n60-w bl25n60-f.pdf

BL25N60 Power MOSFET 1Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600
bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf

BL25N40 Power MOSFET 1Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
bl25n50-w bl25n50-f.pdf

BL25N50 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STB9NK80Z | VSE002N03MS-G | SSS2N60B | 2SK3430-ZJ | IRFD9220PBF | APT11N80BC3G | R6535KNZ1
History: STB9NK80Z | VSE002N03MS-G | SSS2N60B | 2SK3430-ZJ | IRFD9220PBF | APT11N80BC3G | R6535KNZ1



Список транзисторов
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