Справочник MOSFET. BL30N30-A

 

BL30N30-A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BL30N30-A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

BL30N30-A Datasheet (PDF)

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 bl30n30-p bl30n30-a bl30n30-b.pdf pdf_icon

BL30N30-A

BL30N30 Power MOSFET 1Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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 bl30n50-w bl30n50-f.pdf pdf_icon

BL30N30-A

BL30N50 Power MOSFET 1Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

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 bl30n60-w bl30n60-f.pdf pdf_icon

BL30N30-A

BL30N60 Power MOSFET 1Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

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 bl30n65-f bl30n65-w.pdf pdf_icon

BL30N30-A

BL30N65 Power MOSFET 1Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

ПОКАЗАТЬ ЕЩЁ

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History: IPD65R600C6 | AFN2354 | IXTQ96N15P | 2V7002L | BF900 | 7N65KL-TF2-T | IXFP18N65X2

 

 
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