BL30N60-W datasheet, аналоги, основные параметры

Наименование производителя: BL30N60-W  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 365 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 550 ns

Cossⓘ - Выходная емкость: 640 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: TO-3PN

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Аналог (замена) для BL30N60-W

- подборⓘ MOSFET транзистора по параметрам

 

BL30N60-W даташит

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 bl30n60-w bl30n60-f.pdf pdf_icon

BL30N60-W

BL30N60 Power MOSFET 1 Description Step-Down Converter BL30N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

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 bl30n65-f bl30n65-w.pdf pdf_icon

BL30N60-W

BL30N65 Power MOSFET 1 Description Step-Down Converter BL30N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:1368K  belling
 bl30n50-w bl30n50-f.pdf pdf_icon

BL30N60-W

BL30N50 Power MOSFET 1 Description BL30N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500

 9.2. Size:1115K  belling
 bl30n30-p bl30n30-a bl30n30-b.pdf pdf_icon

BL30N60-W

BL30N30 Power MOSFET 1 Description Step-Down Converter BL30N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BL2N60-P, BL2N60-U, BL30N30-A, BL30N30-B, BL30N30-P, BL30N50-F, BL30N50-W, BL30N60-F, 2N7000, BL30N65-F, BL30N65-W, BL33N25-A, BL33N25-P, BL3N100-A, BL3N100-D, BL3N100E-A, BL3N100E-D