Справочник MOSFET. BL3N100E-D

 

BL3N100E-D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BL3N100E-D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 63 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

BL3N100E-D Datasheet (PDF)

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 bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf pdf_icon

BL3N100E-D

BL3N100E Power MOSFET 1Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P

 7.1. Size:660K  belling
 bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf pdf_icon

BL3N100E-D

BL3N100 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

 8.1. Size:659K  belling
 bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf pdf_icon

BL3N100E-D

BL3N105 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio

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 bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf pdf_icon

BL3N100E-D

BL3N150 Power MOSFET 1Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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