BL7N65A-D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BL7N65A-D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 252 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 85 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO-252
- подбор MOSFET транзистора по параметрам
BL7N65A-D Datasheet (PDF)
bl7n65a-p bl7n65a-a bl7n65a-u bl7n65a-d.pdf

BL7N65A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
bl7n65b-p bl7n65b-a bl7n65b-u bl7n65b-d.pdf

BL7N65B Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N65B, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
bl7n60a-p bl7n60a-a bl7n60a-u bl7n60a-d.pdf

BL7N60A Power MOSFET Power MOSFETPower MOSFETPower MOSFET1Description BL7N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KTK698TV | JCS5N50CT | APT6030SVFR | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005
History: KTK698TV | JCS5N50CT | APT6030SVFR | NVMFS5C628N | SI7913DN | NCEP026N10F | MC11N005



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
tip41c datasheet | mje15032 | tip32c datasheet | mje15032g | irf1404 | bc550 | irf9530 | 2n2222a transistor