FQN1N60C - аналоги, параметры транзистора - Справочник транзисторов

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QFET FQN1N60C 600V N-Channel MOSFET Features Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.8 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF) minimi

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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January 2006 QFET FQN1N50C 500V N-Channel MOSFET Features Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.9 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typica