Справочник MOSFET. FQN1N60C

 

FQN1N60C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FQN1N60C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 11.5 Ohm
   Тип корпуса: TO92

 Аналог (замена) для FQN1N60C

 

 

FQN1N60C Datasheet (PDF)

 ..1. Size:683K  fairchild semi
 fqn1n60c.pdf

FQN1N60C FQN1N60C

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

 ..2. Size:887K  onsemi
 fqn1n60c.pdf

FQN1N60C FQN1N60C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:682K  fairchild semi
 fqn1n60cbu fqn1n60cta.pdf

FQN1N60C FQN1N60C

QFETFQN1N60C 600V N-Channel MOSFETFeatures Description 0.3 A, 600 V, RDS(on) = 11.5 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.8 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 3.5 pF)minimi

 9.1. Size:1065K  fairchild semi
 fqn1n50cbu fqn1n50cta.pdf

FQN1N60C FQN1N60C

January 2006QFETFQN1N50C 500V N-Channel MOSFETFeatures Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica

 9.2. Size:1068K  fairchild semi
 fqn1n50c.pdf

FQN1N60C FQN1N60C

January 2006QFETFQN1N50C 500V N-Channel MOSFETFeatures Description 0.38 A, 500 V, RDS(on) = 6.0 @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.9 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typica

Другие MOSFET... IRF634B , FQI7N80 , FDC6392S , FQI8N60C , FDP047AN08A0 , FQL40N50 , FQL40N50F , FQN1N50C , STP75NF75 , FDP3652 , FQNL2N50B , FQP10N20C , FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L .

 

 
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