BLM08N10-P - параметры транзистора MOSFET, его аналоги, datasheet

BLM08N10-P Datasheet (PDF)

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Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS Dexcellent R , low gate charge. It can be used in a wide R

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Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS Dexcellent R , low gate charge. It can be used in a wide R

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Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS Dexcellent R , low gate charge. It can be used in a wide R

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Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS Dexcellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) Dvariety of applications. R

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .