Справочник MOSFET. BLP022N10-BA

 

BLP022N10-BA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP022N10-BA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 312.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 292 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 2780 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
   Тип корпуса: TO263-7
     - подбор MOSFET транзистора по параметрам

 

BLP022N10-BA Datasheet (PDF)

 ..1. Size:960K  belling
 blp022n10-ba.pdf pdf_icon

BLP022N10-BA

BLP022N10 MOSFET Step-Down Converter 1Description , BLP022N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.1. Size:1104K  belling
 blp024n10-ba blp024n10-t.pdf pdf_icon

BLP022N10-BA

BLP024N10 MOSFET Step-Down Converter , 1Description BLP024N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.2. Size:988K  belling
 blp021n10-t.pdf pdf_icon

BLP022N10-BA

BLP021N10 MOSFET Step-Down Converter 1Description , BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

 9.3. Size:948K  belling
 blp023n10-b blp023n10-p.pdf pdf_icon

BLP022N10-BA

BLP023N10 MOSFET Step-Down Converter 1Description , BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 10

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