BLP02N06-D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BLP02N06-D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 156.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 68.4 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 1519 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: TO-252
BLP02N06-D Datasheet (PDF)
blp02n06-d.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n06-t.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n06-p.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
blp02n06-q.pdf
BLP02N06 MOSFET Step-Down Converter , 1Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK2753-01 | PHP11N50E | IRF6712S | AONX36320 | IPD70P04P4L-08 | IRF7316PBF-1 | MTB20A03Q8
History: 2SK2753-01 | PHP11N50E | IRF6712S | AONX36320 | IPD70P04P4L-08 | IRF7316PBF-1 | MTB20A03Q8
Список транзисторов
Обновления
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