BLP02N06-T. Аналоги и основные параметры

Наименование производителя: BLP02N06-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 192.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 1519 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm

Тип корпуса: TOLL8

Аналог (замена) для BLP02N06-T

- подборⓘ MOSFET транзистора по параметрам

 

BLP02N06-T даташит

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BLP02N06-T

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

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 blp02n06-d.pdf pdf_icon

BLP02N06-T

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.2. Size:941K  belling
 blp02n06-p.pdf pdf_icon

BLP02N06-T

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.3. Size:693K  belling
 blp02n06-q.pdf pdf_icon

BLP02N06-T

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

ПОКАЗАТЬ ЕЩЁ

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