BLP03N10-P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BLP03N10-P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 180 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 1130 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
Тип корпуса: TO-220
Аналог (замена) для BLP03N10-P
BLP03N10-P Datasheet (PDF)
blp03n10-b blp03n10-p.pdf

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp03n10-ba blp03n10-t.pdf

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp03n10-f.pdf

BLP03N10 MOSFET Step-Down Converter , 1Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100
blp03n08-f.pdf

BLP03N08 MOSFET Step-Down Converter , 1Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
Другие MOSFET... BLP03N08-B , BLP03N08-BA , BLP03N08-F , BLP03N08-P , BLP03N08-T , BLP03N10-B , BLP03N10-BA , BLP03N10-F , P0903BDG , BLP03N10-T , BLP042N10G-B , BLP042N10G-P , BLP042N15J-B , BLP042N15J-P , BLP045N10-B , BLP045N10-P , BLP04N08-B .
History: IXFP18N60X | DHS025N88E | FDMS3610S | TMD2N60AZ
History: IXFP18N60X | DHS025N88E | FDMS3610S | TMD2N60AZ



Список транзисторов
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