Справочник MOSFET. BLP065N10GL-P

 

BLP065N10GL-P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLP065N10GL-P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 780 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для BLP065N10GL-P

   - подбор ⓘ MOSFET транзистора по параметрам

 

BLP065N10GL-P Datasheet (PDF)

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BLP065N10GL-P

BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

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BLP065N10GL-P

BLP065N10GL MOSFET Step-Down Converter , 1Description BLP065N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Par

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BLP065N10GL-P

BLP065N08GL MOSFET Step-Down Converter , 1Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P

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BLP065N10GL-P

BLP065N08G Step-Down Converter , 1Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BLP05N15-P , BLP065N08G-B , BLP065N08G-D , BLP065N08GL-Q , BLP065N08G-P , BLP065N08G-U , BLP065N10GL-B , BLP065N10GL-D , IRF9640 , BLP065N10GL-Q , BLP06N08G-B , BLP06N08G-P , BLP075N10G-B , BLP075N10G-P , BLP08N10G-B , BLP08N10G-D , BLP08N10G-P .

History: DMG302PU | DH065N04 | SM2317PSA | IXFK200N10P | 2P829B | IPP60R950C6 | RSJ450N04

 

 
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