Справочник MOSFET. BLS60R036-W

 

BLS60R036-W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLS60R036-W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 480 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 9200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO-3PN
     - подбор MOSFET транзистора по параметрам

 

BLS60R036-W Datasheet (PDF)

 ..1. Size:1433K  belling
 bls60r036-f bls60r036-w.pdf pdf_icon

BLS60R036-W

BLS60R036 Power MOSFET Step-Down Converter 1Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 8.1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R036-W

BLS60R360 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R036-W

BLS60R380F Power MOSFET Step-Down Converter 1Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.3. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R036-W

BLS60R150 Power MOSFET 1Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

ПОКАЗАТЬ ЕЩЁ

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History: DMN3052LSS | FHF630A

 

 
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