BLS60R520-P. Аналоги и основные параметры

Наименование производителя: BLS60R520-P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 90 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 420 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm

Тип корпуса: TO-220

Аналог (замена) для BLS60R520-P

- подборⓘ MOSFET транзистора по параметрам

 

BLS60R520-P даташит

 ..1. Size:604K  belling
 bls60r520-p bls60r520-a bls60r520-u bls60r520-d.pdf pdf_icon

BLS60R520-P

BLS60R520 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R520-P

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R520-P

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.3. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R520-P

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLS60R360-U, BLS60R380F-A, BLS60R380F-B, BLS60R380F-D, BLS60R380F-P, BLS60R380F-U, BLS60R520-A, BLS60R520-D, IRFP260, BLS60R520-U, BLS65R041F-F, BLS65R041F-W, BLS65R165-A, BLS65R165-B, BLS65R165-I, BLS65R165-P, BLS65R165-W