Справочник MOSFET. BLS65R560-D

 

BLS65R560-D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLS65R560-D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 440 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

BLS65R560-D Datasheet (PDF)

 ..1. Size:604K  belling
 bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf pdf_icon

BLS65R560-D

BLS65R560 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.1. Size:907K  belling
 bls65r041f-f bls65r041f-w.pdf pdf_icon

BLS65R560-D

BLS65R041F Power MOSFET 1Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.2. Size:586K  belling
 bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf pdf_icon

BLS65R560-D

BLS65R165 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.3. Size:632K  belling
 bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf pdf_icon

BLS65R560-D

BLS65R380 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AON6661 | STF16NM50N | MTP15N05E | 4N65G-TND-R | UPA573CT | P0260AD | SWN4N70D1

 

 
Back to Top

 


 
.