MPSA65M130B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MPSA65M130B
Маркировка: MP65M130B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 65 nC
trⓘ - Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 61 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MPSA65M130B
MPSA65M130B Datasheet (PDF)
mpsa65m130b.pdf
MPSA65M130B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=25ARDS(on) @ :0.13 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf
MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2
mpsa65m165b.pdf
MPSA65M165B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D =20.4ARDS(on) @ :0.165 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (
mpsa65m1k0b.pdf
MPSA65M1K 0B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=4.8 ARDS(on) @ :1.0 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
mpsa65m110b.pdf
MPSA65M110B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=29.1ARDS(on) @ :0.11 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP
mpsa65m180cfd.pdf
MPSA65M180CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
mpsa65m1k6.pdf
MPSA65M1K6Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.6 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
mpsa65m1k5.pdf
MPSA65M1K5Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.5 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device
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Список транзисторов
Обновления
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