FIR14N65FG. Аналоги и основные параметры

Наименование производителя: FIR14N65FG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 44.07 ns

Cossⓘ - Выходная емкость: 169 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.7 Ohm

Тип корпуса: TO-220F

Аналог (замена) для FIR14N65FG

- подборⓘ MOSFET транзистора по параметрам

 

FIR14N65FG даташит

 ..1. Size:2174K  first semi
 fir14n65fg.pdf pdf_icon

FIR14N65FG

FIR14N65FG 14A, 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-220F The FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

 8.1. Size:2684K  first semi
 fir14ns70afg.pdf pdf_icon

FIR14N65FG

FIR14NS70AFG 700V N-Channel Super Junction MOSFET-H Features PIN Connection TO-220F Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD Diode G Application D S Switch Mode Power Supply (SMPS) g Schematic dia ram Uninterruptible Power Supply (UPS) Power Factor Correctio

 8.2. Size:4922K  first semi
 fir14n50fg.pdf pdf_icon

FIR14N65FG

FIR14N50FG CREAT BY ART Advanced N-Ch Power MOSFET-G PIN Connection TO-220F VDSS 500 V ID 13 A PD (TC=25 ) 150 W RDS(ON) 0.4 G D S Features Fast Switching g Schematic dia ram Low ON Resistance(Rdson 0.5 ) D Low Gate Charge (Typical Data 85nC) Low Reverse transfer capacitances(Typical 100pF) G 100% Single Pulse avalanche energy Test S Marking Di

 8.3. Size:2592K  first semi
 fir14ns65afg.pdf pdf_icon

FIR14N65FG

FIR14NS65AFG 14A, 650V DP MOS POWER TRANSISTOR-S DESCRIPTION PIN Connection TO-220F FIR14NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Fu

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