FIR20N10LG - описание и поиск аналогов

 ..1. Size:1419K  first semi
 fir20n10lg.pdf 

FIR20N10LG Advanced N-Ch Power MOSFET-D PIN Connection TO-252(D-PAK) Features Low Intrinsic Capacitances. D Excellent Switching Characteristics. Extended Safe Operating Area. G Unrivalled Gate Charge Qg= 31nC (Typ.). S BVDSS=100V,ID= 20A RDS(on) 0.07 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram Y = Year

 7.1. Size:4651K  first semi
 fir20n15lg.pdf 

FIR20N15LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

 8.1. Size:1511K  first semi
 fir20ns65afg.pdf 

FIR20NS65AFG 20A,650V DP MOS Power Transistor-S PIN Connection TO-220F GENERAL DESCRIPTION FIR20NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power G D S density, and superior the

 8.2. Size:3843K  first semi
 fir20n06lg.pdf 

FIR20N06LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description TheFIR20N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 8.3. Size:3309K  first semi
 fir20n50fg.pdf 

FIR20N50FG Advanced N-Ch Power MOSFET PIN Connection TO-220F General Description FIR20N50FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superi

 8.4. Size:2667K  first semi
 fir20n65afg.pdf 

FIR20N65AFG PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=75 nC (Typ.). BVDSS=650V,ID=20A G RDS(on) 0.42 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location WW = Work

 8.5. Size:8650K  first semi
 fir20n65fg.pdf 

FIR20N65FG N-Channel Power MOSFET-X PIN Connection TO-220F VDSS 650 V ID 20 A PD(TC=25 ) 85 W RDS(ON)Typ 0.45 G Features DS Fast Switching g Schematic dia ram Low ON Resistance(Rdson 0.45 ) D Low Gate Charge (Typical Data 65nC) Low Reverse transfer capacitances(Typical 20p G 100% Single Pulse avalanche energy Test S Applications Power switch circuit of adapt

 8.6. Size:4354K  first semi
 fir20n60fg.pdf 

FIR20N60FG N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 20 A PD(TC=25 ) 250 W RDS(ON) 0.35 G Features D S Fast Switching g Schematic dia ram Low ON Resistance(Rdso D Low Gate Charge (Typical Data 70nC) Low Reverse transfer capacitances(Typical 32pF) G 100% Single Pulse avalanche energy Test S Applications Marking Diagr