FIR40N20LG - параметры транзистора MOSFET, его аналоги, datasheet

FIR40N20LG Datasheet (PDF)

..1. Size:4328K first semi
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FIR40N20LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)

8.1. Size:2137K first semi
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FIR40N10LG100V N-Channel MOSFET TO-252Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 61.7nC (Typ.). BVDSS=100V,ID=40A RDS(on) : 0.032 (Max) @VG=10V 100% Avalanche Tested 1.Gate (G)2.Drain (D)3.Sourse (S)Absolute Maximum Ratings* (Tc=25 Unless otherwise no

8.2. Size:4219K first semi
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FIR40N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

Другие MOSFET... FIR25N03D3G , FIR2N60AFG , FIR2N65AFG , FIR2N70FG , FIR2N80FG , FIR30N03D3G , FIR40N10LG , FIR40N15LG , RFP50N06 , FIR4N70FG , FIR4N80FG , FIR4N90FG , FIR50N06LG , FIR50N15PG , FIR5N50FG , FIR5N65FG , FIR5N80FG .