FIR6N65FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 650 V ID 6 A PD(TC=25) 85 W RDS(ON)Typ 1.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson1.7) Low Gate Charge (Typical Data:19nC) G Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test S Marking DiagramApplications

FIR6N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 6 A PD(TC=25) 85 WRDS(ON) 1.4 G FeaturesD S Fast Switching gSchematic dia ram Low ON Resistance(Rdson1.6) D Low Gate Charge (Typical Data: 22nC) Low Reverse transfer capacitances(Typical: 14pF) G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPowe

FIR6N40FG400V N-Channel MOSFET -T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=22nC (Typ.). BVDSS=400V,ID=6AG RDS(on) : 1.0 (Max) @VG=10V D S 100% Avalanche Testedg Schematic dia ram D G S Marking DiagramY = YearA = Assembly

FIR6N90FG900V N-Channel MOSFET-T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=30nC (Typ.). BVDSS=900V,ID=6AG D S RDS(on) : 2.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly L

FIR6N70FGN - Ch a n n el P o w e r M O S F ET-EGENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FGeffect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr