Справочник MOSFET. FIR6N65FG

 

FIR6N65FG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FIR6N65FG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 15.5 ns
   Cossⓘ - Выходная емкость: 71 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FIR6N65FG

 

 

FIR6N65FG Datasheet (PDF)

 ..1. Size:5764K  first semi
 fir6n65fg.pdf

FIR6N65FG FIR6N65FG

FIR6N65FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 650 V ID 6 A PD(TC=25) 85 W RDS(ON)Typ 1.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson1.7) Low Gate Charge (Typical Data:19nC) G Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test S Marking DiagramApplications

 8.1. Size:3712K  first semi
 fir6n60fg.pdf

FIR6N65FG FIR6N65FG

FIR6N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 6 A PD(TC=25) 85 WRDS(ON) 1.4 G FeaturesD S Fast Switching gSchematic dia ram Low ON Resistance(Rdson1.6) D Low Gate Charge (Typical Data: 22nC) Low Reverse transfer capacitances(Typical: 14pF) G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPowe

 9.1. Size:2904K  first semi
 fir6n40fg.pdf

FIR6N65FG FIR6N65FG

FIR6N40FG400V N-Channel MOSFET -T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=22nC (Typ.). BVDSS=400V,ID=6AG RDS(on) : 1.0 (Max) @VG=10V D S 100% Avalanche Testedg Schematic dia ram D G S Marking DiagramY = YearA = Assembly

 9.2. Size:2066K  first semi
 fir6n90fg.pdf

FIR6N65FG FIR6N65FG

FIR6N90FG900V N-Channel MOSFET-T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=30nC (Typ.). BVDSS=900V,ID=6AG D S RDS(on) : 2.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly L

 9.3. Size:2240K  first semi
 fir6n70fg.pdf

FIR6N65FG FIR6N65FG

FIR6N70FGN - Ch a n n el P o w e r M O S F ET-EGENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FGeffect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr

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