Справочник MOSFET. P1610ATF

 

P1610ATF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P1610ATF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 110 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 34 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 88 ns
   Cossⓘ - Выходная емкость: 258 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для P1610ATF

 

 

P1610ATF Datasheet (PDF)

 ..1. Size:165K  niko-sem
 p1610atf.pdf

P1610ATF P1610ATF

P1610ATFN-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 16m 110V 34A G 2.DRAIN 3.SOURCESABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS 20 VTC = 25 C 34 Continuous Drain Current2 ID

 7.1. Size:733K  unikc
 p1610at.pdf

P1610ATF P1610ATF

P1610ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V110V 51ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C51IDContinuous Drain Current2TC = 100 C32AIDM150Pulsed Drain Current1,2IASAvalanche Current 12

 7.2. Size:142K  niko-sem
 p1610at.pdf

P1610ATF P1610ATF

N-Channel Logic Level Enhancement P1610AT NIKO-SEM Mode Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 16m 110V 51A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 51 Continuous Drai

 8.1. Size:508K  unikc
 p1610ad.pdf

P1610ATF P1610ATF

P1610ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V110V 45ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 110VVGSGate-Source Voltage 20TC= 25 C45IDContinuous Drain CurrentTC= 100 C28AIDM80Pulsed Drain Current1

 8.2. Size:304K  niko-sem
 p1610ad.pdf

P1610ATF P1610ATF

P1610AD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 110V 16m 45A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 110 V Gate-Source Voltage VGS 20 V TC = 25

 8.3. Size:341K  niko-sem
 p1610ak.pdf

P1610ATF P1610ATF

N-Channel Enhancement Mode P1610AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G110V 16m 36A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 110 V Gate-Source Volt

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top