Справочник MOSFET. P2610BI

 

P2610BI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P2610BI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 42 ns
   Cossⓘ - Выходная емкость: 139 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0268 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для P2610BI

 

 

P2610BI Datasheet (PDF)

 ..1. Size:192K  niko-sem
 p2610bi.pdf

P2610BI P2610BI

P2610BI N-Channel Enhancement Mode NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 26.8m 36A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 8.1. Size:415K  unikc
 p2610bs.pdf

P2610BI P2610BI

P2610BSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C23AIDM70Pulsed Drain Curr

 8.2. Size:733K  unikc
 p2610bd.pdf

P2610BI P2610BI

P2610BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C36IDContinuous Drain Current2TC = 100 C23AIDM80Pulsed Drain Cur

 8.3. Size:439K  unikc
 p2610bt.pdf

P2610BI P2610BI

P2610BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C23AIDM70Pulsed Drain Curre

 8.4. Size:388K  niko-sem
 p2610bs.pdf

P2610BI P2610BI

P2610BS N-Channel Enhancement Mode NIKO-SEM TO-263 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8m 36A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

 8.5. Size:389K  niko-sem
 p2610btf.pdf

P2610BI P2610BI

P2610BTF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8m 24A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

 8.6. Size:430K  niko-sem
 p2610bk.pdf

P2610BI P2610BI

N-Channel Enhancement Mode P2610BK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D DDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26.8m 100V 25A G. GATE GD. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Sour

 8.7. Size:192K  niko-sem
 p2610bd.pdf

P2610BI P2610BI

P2610BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 26.8m 36A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 8.8. Size:310K  cn vbsemi
 p2610bt.pdf

P2610BI P2610BI

P2610BTwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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