PA110NK - Аналоги. Основные параметры
Наименование производителя: PA110NK
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 21
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 9
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 21
ns
Cossⓘ - Выходная емкость: 55
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11
Ohm
Тип корпуса:
PDFN5X6P
Аналог (замена) для PA110NK
-
подбор ⓘ MOSFET транзистора по параметрам
PA110NK технические параметры
..1. Size:551K niko-sem
pa110nk.pdf 

N- & P-Channel Enhancement Mode Field PA110NK NIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 180m -10A G. GATE Q1 100V 110m 9A D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V
8.1. Size:340K niko-sem
pa110nv.pdf 

N- & P-Channel Enhancement Mode Field PA110NV NIKO-SEM Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 170m -2.5A Q1 100V 110m 2.9A G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -100 100 V Gate-Source V
9.1. Size:771K unikc
pa110bc.pdf 

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 4 ID Continuous Drain Current TA = 100 C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E
9.2. Size:465K unikc
pa110bv.pdf 

PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.2 ID Continuous Drain Current TA = 70 C 2.5 A IDM 10 Pulsed Drain Curr
9.3. Size:411K unikc
pa110bd.pdf 

PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Curren
9.4. Size:739K unikc
pa110bda.pdf 

PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 105m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9.2 A IDM 20 Pulsed Drain Cur
9.5. Size:445K unikc
pa110bl.pdf 

PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 6 ID Continuous Drain Current TA = 25 C 3.2 A TA = 100 C 2 IDM 15 Pulsed Drain Current1 IAS Aval
9.6. Size:224K niko-sem
pa110bc.pdf 

PA110BC N-Channel Enhancement Mode NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 110m 4A 1 2 3 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA =
9.7. Size:342K niko-sem
pa110bea.pdf 

PA110BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 100V 105m 8.5A D D D D G. GATE G D. DRAIN S. SOURCE #1 S S S G 100% UIS Tested S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
9.8. Size:391K niko-sem
pa110bda.pdf 

PA110BDA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 105m 15A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC
9.9. Size:240K niko-sem
pa110bl.pdf 

PA110BL N-Channel Enhancement Mode NIKO-SEM SOT-223 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 110m 3A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6 TA = 25 C 3.2 A
9.11. Size:308K niko-sem
pa110hea.pdf 

Dual N-Channel Enhancement Mode PA110HEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110m 8.4A #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25
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