FCPF11N60T - описание и поиск аналогов

 

FCPF11N60T. Аналоги и основные параметры

Наименование производителя: FCPF11N60T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 36 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm

Тип корпуса: TO220F

Аналог (замена) для FCPF11N60T

- подборⓘ MOSFET транзистора по параметрам

 

FCPF11N60T даташит

 ..1. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdfpdf_icon

FCPF11N60T

March 2014 FCP11N60/FCPF11N60 General Description Features SuperFET MOSFET is Fairchild Semiconductor s first 650V @Tj = 150 C genera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32 family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC) outstanding low on-resistance and lower gate charge Low effective outpu

 5.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdfpdf_icon

FCPF11N60T

August 2009 SupreMOSTM FCP11N60N / FCPF11N60NT tm N-Channel MOSFET 600V, 10.8A, 0.299 Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC) process that differentiates it from preceding multi-epi

 5.2. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdfpdf_icon

FCPF11N60T

December 2008 TM SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

 5.3. Size:373K  fairchild semi
fcpf11n60f.pdfpdf_icon

FCPF11N60T

November 2013 FCPF11N60F N-Channel SuperFET FRFET MOSFET 600 V, 11 A, 380 m Features Description 600 V @ TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 m utilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns) resistanc

Другие MOSFET... FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , IRF840 , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C , FQP9P25 , FQPF10N20C , FDP39N20 , FQPF10N50CF .

History: FQP8P10

 

 

 


 
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