Справочник MOSFET. SJMN065R65W

 

SJMN065R65W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SJMN065R65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 431 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: TO-247
     - подбор MOSFET транзистора по параметрам

 

SJMN065R65W Datasheet (PDF)

 ..1. Size:702K  auk
sjmn065r65w.pdfpdf_icon

SJMN065R65W

SJMN065R65W N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Low FOM R * Q DS(on) g Low drain-source On-resistance: R =0.065 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN065R65W N065R65 TO-247 Marking Information

 9.1. Size:701K  auk
sjmn041r65sw.pdfpdf_icon

SJMN065R65W

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

 9.2. Size:666K  auk
sjmn070r60sw.pdfpdf_icon

SJMN065R65W

SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package

 9.3. Size:664K  auk
sjmn099r60zsw.pdfpdf_icon

SJMN065R65W

SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S

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History: IRFBC30L | AO6804A | IRLI640A | 2SK2376 | WMJ38N60C2 | PP2915AD | TPCA8080

 

 
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