Справочник MOSFET. SJMN088R65W

 

SJMN088R65W Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SJMN088R65W
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 256 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.088 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для SJMN088R65W

   - подбор ⓘ MOSFET транзистора по параметрам

 

SJMN088R65W Datasheet (PDF)

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SJMN088R65W

SJMN088R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-247 Part Number Marking Package SJMN088R65W N088R65 TO-24

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sjmn088r65f.pdfpdf_icon

SJMN088R65W

SJMN088R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN088R65F N088R65 T

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sjmn088r65fd.pdfpdf_icon

SJMN088R65W

SJMN088R65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN088R65FD N088R65

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sjmn041r65sw.pdfpdf_icon

SJMN088R65W

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

Другие MOSFET... SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , SJMN074R65SW , SJMN074RH65SW , SJMN088R65F , SJMN088R65FD , SKD502T , SJMN099R60ZSW , SJMN099R65SW , SJMN099RH65SW , SJMN165R65ZF , SJMN180R65CB , SJMN180R65CF , SJMN190R60F , SJMN190R65B .

History: SI6410DQ | SIZ346DT | NCE40P40L | SMT12N60 | WML07N105C2 | TMD2N60H | IRFL3713

 

 
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