Справочник MOSFET. SJMN088R65W

 

SJMN088R65W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SJMN088R65W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 256 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.088 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для SJMN088R65W

 

 

SJMN088R65W Datasheet (PDF)

 ..1. Size:697K  auk
sjmn088r65w.pdf

SJMN088R65W
SJMN088R65W

SJMN088R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-247 Part Number Marking Package SJMN088R65W N088R65 TO-24

 4.1. Size:782K  auk
sjmn088r65f.pdf

SJMN088R65W
SJMN088R65W

SJMN088R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN088R65F N088R65 T

 4.2. Size:785K  auk
sjmn088r65fd.pdf

SJMN088R65W
SJMN088R65W

SJMN088R65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN088R65FD N088R65

 9.1. Size:701K  auk
sjmn041r65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

 9.2. Size:666K  auk
sjmn070r60sw.pdf

SJMN088R65W
SJMN088R65W

SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package

 9.3. Size:664K  auk
sjmn099r60zsw.pdf

SJMN088R65W
SJMN088R65W

SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S

 9.4. Size:669K  auk
sjmn099rh65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN099RH65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN099RH65SW N099RH65S TO-247

 9.5. Size:702K  auk
sjmn065r65w.pdf

SJMN088R65W
SJMN088R65W

SJMN065R65W N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Low FOM R * Q DS(on) g Low drain-source On-resistance: R =0.065 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN065R65W N065R65 TO-247 Marking Information

 9.6. Size:719K  auk
sjmn074rh65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN074RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074RH65SW N074RH65 TO-247 Ma

 9.7. Size:719K  auk
sjmn074r65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN074R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074R65SW N074R65 TO-247 Marki

 9.8. Size:719K  auk
sjmn041rh65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN041RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041RH65SW N041RH65S TO-247 M

 9.9. Size:676K  auk
sjmn099r65sw.pdf

SJMN088R65W
SJMN088R65W

SJMN099R65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN099R65SW N099R65S TO-247 Mark

 9.10. Size:638K  auk
sjmn030r60scw.pdf

SJMN088R65W
SJMN088R65W

SJMN030R60SCW N-Channel Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features 75A, 600V Super-junction MOSFET Ultra fast recovery body diode Low drain-source On-resistance: R =24m (Typ.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN030R60SCW N030R60SC TO-247-3L

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