SJMN180R65CF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SJMN180R65CF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 1203 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO-220F
Аналог (замена) для SJMN180R65CF
SJMN180R65CF Datasheet (PDF)
sjmn180r65cf.pdf
SJMN180R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.18 (Max.) DS(on) Ultra low gate charge: Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN1
sjmn180r65cb.pdf
SJMN180R65CB Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.18 (Max.) D DS(on) Ultra low gate charge: Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package
sjmn1k2r80zd.pdf
SJMN1K2R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K2R80ZD SJMN1K2R80Z TO-252 Marking Information Column 1, 2
sjmn190r65w.pdf
SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247
sjmn1k6r70d.pdf
SJMN1K6R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS JD Low drain-source On resistance: R =1.6 (Max.) DS(on) Ultra low gate charge: Qg=5.5nC(Typ.) RoHS compliant device ESD improved capability G Ordering Information S Part Number Marking Package TO-252 SJMN1R6R70D SJMN1K6R70
sjmn190r60f.pdf
SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO
sjmn190r65f.pdf
SJMN190R65FSuper Junction MOSFETN-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2
sjmn190r65b.pdf
SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N
sjmn1k4r90zd.pdf
SJMN1K4R90ZD Super Junction MOSFET 900V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K4R90ZD SJMN1K4R90Z TO-252 Marking Information Column 1,
sjmn165r65zf.pdf
SJMN165R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN165R65ZF N165R65Z TO-220F-3L Marking Information Column 1:
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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