SJMN290R60ZD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SJMN290R60ZD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 106 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12.9 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Тип корпуса: TO-252
Аналог (замена) для SJMN290R60ZD
SJMN290R60ZD Datasheet (PDF)
sjmn290r60zd.pdf
SJMN290R60ZD Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN290R60ZD SJMN290R60Z TO-252 Marking Information SJMN Column
sjmn290r60zf.pdf
SJMN290R60ZF Super Junction MOSFET 600V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information Part Number Marking Package TO-220F-3L SJMN290R60ZF N290R60Z TO-220F-3L Marking Information Column 1: Ma
sjmn230r70zf.pdf
SJMN230R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: RDS(on)=0.2 (Typ.) Very Low FOM (R X Q ) DS(on) g 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN230R70ZF N230R70Z TO-22
sjmn250r80zw.pdf
SJMN250R80ZW Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode Ordering Information G D S Part Number Marking Package TO-247 SJMN250R80ZW N250R80Z TO-247 Marking Information Column 1: Manufac
sjmn250r80zf.pdf
SJMN250R80ZF Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN250R80ZF N250R80Z TO-220F-3L Marking Information Column 1:
sjmn250r80zb.pdf
SJMN250R80ZB Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss D Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN250R80ZB SJMN250R80Z TO-263 (D2-PAK) Marking Inform
sjmn250r80zp.pdf
SJMN250R80ZP Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220AB-3L Part Number Marking Package SJMN250R80ZP N250R80Z TO-220AB-3L Marking Information Column
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918