SJMN360R70ZF
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SJMN360R70ZF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 11.6
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 37
ns
Cossⓘ - Выходная емкость: 30
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36
Ohm
Тип корпуса:
TO-220F
- подбор MOSFET транзистора по параметрам
SJMN360R70ZF
Datasheet (PDF)
..1. Size:636K auk
sjmn360r70zf.pdf 
SJMN360R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN360R70ZF N360R70Z TO-220F-3L Marking Information Colum
3.1. Size:682K auk
sjmn360r70zd.pdf 
SJMN360R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN360R70ZD SJMN360R70Z TO-252 Marking Information Column
9.1. Size:662K auk
sjmn380r65b.pdf 
SJMN380R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN380R65B SJM
9.2. Size:846K auk
sjmn380r65mf.pdf 
SJMN380R65MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package
9.3. Size:716K auk
sjmn380r65cd.pdf 
SJMN380R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) D DS(on) Ultra low gate charge: Qg=17.5nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN38
9.4. Size:697K auk
sjmn380r80zb.pdf 
SJMN380R80ZB Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss D Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN380R80ZB SJMN380R80Z TO-263 (D2-PAK) Marking Informa
9.5. Size:781K auk
sjmn380r65f.pdf 
SJMN380R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R65F N380R65 TO
9.6. Size:504K auk
sjmn380r60d.pdf 
SJMN380R60D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-252 SJMN380R60D SJMN380R60
9.7. Size:726K auk
sjmn380r65d.pdf 
SJMN380R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN380R65D SJMN380R65
9.8. Size:749K auk
sjmn380r70f.pdf 
SJMN380R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R70F N380R70 TO
9.9. Size:631K auk
sjmn380r65zf.pdf 
SJMN380R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R65ZF N380R65Z TO-220F-3L Marking Information Colum
9.10. Size:693K auk
sjmn380r70d.pdf 
SJMN380R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN380R70D SJMN380R
9.11. Size:801K auk
sjmn380r80zfd.pdf 
SJMN380R80ZFD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R80ZFD N380R80Z TO-220F-3L Marking Information Column
9.12. Size:792K auk
sjmn380r65md.pdf 
SJMN380R65MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJM
9.13. Size:680K auk
sjmn380r65zd.pdf 
SJMN380R65ZD Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN380R65ZD SJMN380R65Z TO-252 Marking Information Column
9.14. Size:757K auk
sjmn380r65cf.pdf 
SJMN380R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=17.5nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJ
9.15. Size:811K auk
sjmn380r60f.pdf 
SJMN380R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R60F N380R60 TO
9.16. Size:677K auk
sjmn380r70b.pdf 
SJMN380R70B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN380R70B SJ
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History: MCH3484
| DMN30H4D0L
