SMN03T80I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =800V Min. DSS Low gate charge: Q =24nC (Typ.) g Low drain-source On resistance: R =4.5 (Max.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information Part Number Marking Package I-PAK SMN03T80I SMN03T80 I-PAK Marking Information Column 1, 2

SMN03T80ISAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATION Features BVDSS=800V Min. Low gate charge: Qg=19nC (Typ.) Low drain-source On resistance: RDS(on)=4.2 (Max.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I-PAK I-PAK SMN03T80IS SMN03T80 (Short Lead) Marking Information

SMN03T80F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =800V (Min.) DSS Low gate charge: Q =24nC (Typ.) g Low drain-source On resistance: R =4.5 (Max.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SMN03T80F SMN03T80 TO-220F-3L Marking Information

PSMN035-150B;PSMN035-150PN-channel enhancement mode field-effect transistorRev. 04 22 February 2001 Product specification1. DescriptionSiliconMAX1 products use the latest TrenchMOS2 technology to achieve thelowest possible on-state resistance for each package.Product availability:PSMN035-150P in SOT78 (TO-220AB)PSMN035-150B in SOT404 (D2-PAK).2. Features Fast swi

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

DISCRETE SEMICONDUCTORSDATA SHEETPSMN035-150B; PSMN035-150PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN035-150B; PSMN035-150PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low therma

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

PSMN035-100LSN-channel QFN3333 100 V 32m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

PSMN039-100YSN-channel LFPAK 100 V 39.5 m standard level MOSFETRev. 02 2 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

PSMN030-150PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 16 December 2010 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

PSMN038-100KN-channel enhancement mode field-effect transistorRev. 01 16 January 2001 Product specification1. DescriptionSiliconMAX1 products use the latest Philips TrenchMOS2 technology to achievethe lowest possible on-state resistance in a SOT96-1 (SO8) package.Product availability:PSMN038-100K in SOT96-1 (SO8).2. Features Very low on-state resistance Fast switch

PSMN034-100BSN-channel 100 V 34.5 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN034-100PSN-channel 100 V 34.5 m standard level MOSFET in TO220.Rev. 02 1 March 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

PSMN030-60YSN-channel LFPAK 60 V 24.7 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

PSMN039-100YSN-channel LFPAK 100 V 39.5 m standard level MOSFETRev. 02 2 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

PSMN038-100YLN-channel 100 V 37.5 m logic level MOSFET in LFPAK561 May 2013 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) inLFPAK56 package. This product has been designed and qualified for use in a wide rangeof industrial, communications and domestic equipment.2. Features and benefits High efficiency

PSMN035-150www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

isc N-Channel MOSFET Transistor PSMN034-100PSFEATURESDrain Current : I = 32A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand